2N3507

Description SEMICOA Corporation offers: Screening and processing per MIL-PRF-19500 JAN level (2N3507J) JANTX level (2N3507JX) JANTXV level (2N3507JV) JANS level (2N3507JS) QCI to the applicable level 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Radiation testing (total dose) upon request Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25OC Derate linearly above 25OC Power Dissipation, TC = 25OC Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT RθJA TJ TSTG 2N3507 Silicon NPN Transistor Data Sheet Applications General purpose switching transistor Low power NPN silicon transistor Features Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 1506 Reference document: MIL-PRF-19500/349 Benefits Qualification Levels: JAN, JANTX, JANTXV and JANS Radiation testing available TC = 25°C unless otherwise specified Rating Unit 50 Volts 80 Volts 5 Volts 3A 1W 5.71 mW/°C 5W 28.6 mW/°C 175 °C/W -65 to +200 °C Copyright 2010 Rev. E SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3507 Silicon NPN Transistor Data Sheet ELECTRIC...