2N3501L

Data Sheet No. 2N3501L Type 2N3501L Geometry 5620 Polarity NPN Qual Level: JAN - JANS Features: General-purpose silicon transistor for switching and amplifier applications. Housed in TO-5 case. Also available in chip form using the 5620 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/366 which Semicoa meets in all cases. Generic Part Number: 2N3500L REF: MIL-PRF-19500/366 TO-5 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter voltage Collector-Base Voltage Emitter-Base voltage Collector Current, Continuous Power Dissipation, TA = 25oC Derate above 25oC Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Rating 150 150 6.0 300 5.0 28.8 Unit V V V mA mW mW/oC o TJ TSTG -65 to +200 -65 to +200 C C o Data Sheet No. 2N3501L Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 µA Collector-Base Cutoff Current VCB = 75 V Emitter-Base Cutoff Current VEB = 4 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 150 150 6.0 ----- Max ------50 25 Unit V V V nA nA ON Characteristics Forward Current Transfer Ratio IC = 100 µA, VCE = 10 V (pulsed) IC = 1.0 mA, VCE = 10 V (pulsed) IC = 10 mA, VCE = 10 V (pulsed) IC = 150 mA, VCE = 10 V (pulsed) IC = 300 mA, VCE = 10 V (pulsed) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA...