BD941

isc Silicon NPN Power Transistor BD933/935/937/939/941 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 150mA ·Complement to Type BD934/936/938/940/942 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD933 45 BD935 60 VCBO Collector-Base Voltage BD937 100 BD939 120 BD941 140 BD933 45 VCEO Collector-Emitter Voltage BD935 60 BD937 80 BD939 100 BD941 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 3 ICM Collector Current-Peak 7 IB Base Current-Continuous 0.5 PC Collector Power Dissipation @ TC=25℃ 30 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933/935/937/939/941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD933 VCEO(SUS) Collector-Emitter Sustaining Voltage BD935 BD937 BD939 IC= 30mA ; IB= 0 BD941 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(on) ICBO ICEO Base-Emitter On Voltage Collector Cutoff Current Coll...