2N3467

Data Sheet No. 2N3467 Type 2N3467 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV Features: General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets in all cases. Generic Part Number: 2N3467 REF: MIL-PRF-19500/348 TO-39 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC TJ TSTG Rating 40 40 5.0 1.0 -55 to +175 -55 to +175 Unit V V V mA o C C o Data Sheet No. 2N3467 Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 µA, pulsed Collector-Base Cutoff Current VCB = 30 V VCB = 30 V, TA = +150 C Collector-Emitter Cutoff Current VEB = 3.0 V, VCE = 30 V o Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO1 ICBO2 ICEX Min 40 40 5.0 ------- Max ------100 50 100 Unit V V V nA µA nA ON Characteristics Forward current Transfer Ratio IC = 150 mA, VCE = 1.0 V (pulse test) IC = 500 mA, VCE = 1.0 V (pulse test) IC = 1.0 A, VCE = 5 V (pulse test) IC = 150 mA, VCE = 1.0 V (pulse test), T = -55oC Symbol hFE1 hFE2 hFE3 hFE4 VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat)1 VBE...