TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/368 Devices 2N3439 2N3439L 2N3440 2N3440L Qu...
TECHNICAL DATA
NPN LOW POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/368 Devices 2N3439 2N3439L 2N3440 2N3440L Qualified Level JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC PT Top, Tstg
2N3439
350 450
2N3440
250 300
Units
Vdc Vdc Vdc Adc W W/0C 0 C
@TA = 250C(1) @TC = 250C(2) Operating & Storage Temperature Range 1)
7.0 1.0 0.8 5.0 -55 to +200
TO- 5* 2N3439L, 2N3440L
2)
Derate linearly 4.57 mW/0C for TA > +250C Derate linearly 28.5 mW/0C for TC > +250C
TO-39* (TO205-AD) 2N3439, 2N3440
*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 50 mAdc Collector-Emitter Cutoff Current VCE = 300 Vdc VCE = 200 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 2N3439 2N3440 2N3439 2N3440 V(BR)CEO ICEO 350 250 2.0 2.0 10 Vdc µAdc µAdc µAdc
IEBO
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2N3439, L, 2N3440, L, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol ICEX Min. Max. Unit µAdc µAdc
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current VCE = 450 Vdc, VBE = -1.5 Vdc VCE = 300 Vdc, VBE = -1.5 Vdc Collector-Base Cutoff Current VCB = 360 Vdc VCB = 250 Vdc VCB = 450 Vdc VCB = 300 Vdc 2N3439 2N3440 2N3439 2N3440 ...