SIA437DJ

New Product SiA437DJ www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) 0.0145 at VGS = - 4.5 V - 20 0.0205 at VGS = - 2.5 V 0.0330 at VGS = - 1.8 V 0.0650 at VGS = - 1.5 V ID (A)a - 29.7 - 25 - 19.7 -4 28 nC Qg (Typ.) FEATURES TrenchFET® Power MOSFET Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK SC-70-6L-Single 1 D 2 D 3 6 D 5 D S 4 S 2.05 mm G APPLICATIONS Providing low voltage drop in Smart Phones, Tablet PCs, Mobile Computing: - Battery Switches - Load Switches - Power Management S Marking Code G BUX Part # code XXX Lot Traceability and Date code D P-Channel MOSFET 2.05 mm Ordering Information: SiA437DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 20 ±8 - 29.7 - 23.8 - 12.6b, c - 10b, c - 60 - 16 - 2.9b, c 19 12 3.5b, c 2.2b, c - 50 to 150 260 °C W A Unit V ...