SIA436DJ

New Product SiA436DJ Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. 0.0094 at VGS = 4.5 V 0.0105 at VGS = 2.5 V 8 0.0125 at VGS = 1.8 V 0.0180 at VGS = 1.5 V 0.0360 at VGS = 1.2 V ID (A)a 12 12 12 12 12 15 nC Qg (Typ.) Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Applications such as Smart Phones, Tablet PCs and Mobile Computing - Low Voltage Gate Drive - Low Voltage Drop - Power Switch for ICs PowerPAK SC-70-6L-Single 1 D 2 D 3 6 D 5 D S 4 S 2.05 mm G D Marking Code AOX Part # code XXX Lot Traceability and Date code S G 2.05 mm Ordering Information: SiA436DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Continuous Source-Drain Diode Current Soldering Recommendations (Peak Temperature) d, e Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM IS PD TJ, Tstg Limit 8 ±5 12a 12a 12a, b, c 12a, b, c 50 12a 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V A W °C THERMA...