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ICE60N160B Dataheets PDF



Part Number ICE60N160B
Manufacturers Icemos
Logo Icemos
Description N-Channel Enhancement Mode MOSFET
Datasheet ICE60N160B DatasheetICE60N160B Datasheet (PDF)

Preliminary Data Sheet ICE60N160B ICE60N160B N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems Product Summary ID V(BR)DSS rDS(on) Qg TA=25oC ID=250uA VGS=10V VDS=480V D 23.8A 650V 0.14Ω 85nC Max Min Typ Typ G S T0263 Standard Metal Heatsink 1=Gate, 2=Drain, 3=.

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Preliminary Data Sheet ICE60N160B ICE60N160B N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems Product Summary ID V(BR)DSS rDS(on) Qg TA=25oC ID=250uA VGS=10V VDS=480V D 23.8A 650V 0.14Ω 85nC Max Min Typ Typ G S T0263 Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source. ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Maximum ratings b Parameter , at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=6A 23.8 72 690 A A mJ Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature a When mounted on 1inch square 2oz copper clad FR-4 I AR dv/dt limited by Tjmax VDS=480V, ID=23.8A, Tj=125oC Static AC (f>1Hz) Tc=25oC 6 50.0 ±20 ±30 208 -55 to +150 A V/ns VGS Ptot Tj, Tstg V W o C b Preliminary Data Sheet – Specifications subject to change SP-60N160B-000-2a 06/05/2013 Free Datasheet http://www.datasheet4u.com/ 1 Preliminary Data Sheet ICE60N160B Parameter Thermal characteristics Thermal resistance, junctioncase a Thermal resistance, junctionambient a Soldering temperature, wave soldering only allowed at leads RthJC RthJA T sold leaded 1.6mm (0.063in.) from case for 10 s 0.6 o Symbol Conditions Values Min Typ Max Unit C/W 68 260 o C Electrical characteristics b , at T =25oC, unless otherwise specified j Static characteristics Drain-source breakdown voltage V(BR)DSS VGS(th) Gate threshold voltage VGS=0 V, ID=250µA VDS=VGS, ID=250µA VDS=650V, VGS=0V, o Tj=25 C VDS=650V, VGS=0V, Tj=150°C VGS=±20 V, VDS=0V VGS=10V, ID=11.9A, o Tj=25 C VGS=10V, ID=11.9A, o Tj=150 C f=1 MHZ, open drain 650 2.5 - 675 3 0.1 3.5 1 V Zero gate voltage drain current IDSS µA - 0.14 0.42 4 100 100 0.16 Ω Ω nA Gate source leakage current Drain-source on-state resistance Gate resistance Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance IGSS RDS (on) RG Ciss Coss Crss gfs td(on) tr td(off) tf VGS=0 V, VDS=25 V, f=1 MHz - 2750 980 pF VDS>2*ID*RDS, ID=11.9A VDS=480V, VGS=10V, ID=23.8A, RG=4Ω (External) - 25 25 10 5 67 4.5 ns Transconductance Turn-on delay time Rise time Turn-off delay time Fall time S SP-60N160B-000-2a 06/05/2013 Free Datasheet http://www.datasheet4u.com/ 2 Preliminary Data Sheet ICE60N160B Parameter Gate charge characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current VSD trr Qrr Irm VGS=0V, IS=IF 1.0 440 8 35 1.2 V ns µC A Qgs Qgd Qg Vplateau VDS=480 V, ID=23.8A, VGS=0 to 10 V 16 34 85 6 V nC Symbol Conditions Values Min Typ Max Unit VRR=480V, IS=IF, diFIdt=100 A/µS - SP-60N160B-000-2a 06/05/2013 Free Datasheet http://www.datasheet4u.com/ 3 Preliminary Data Sheet ICE60N160B Output Characteristics 70 60 ID - Drain Current (A) ID - Drain Current (A) 50 40 30 20 10 5V 6V VGS=10 to 7V Transfer Characteristics 70 60 50 40 30 20 TJ = 150˚C 10 0 0 5 10 15 20 0 2 25˚C 0 VDS - Drain-to-Source Voltage (V) 4 6 8 VGS - Gate-to-Source (V) 10 On Resistance vs Drain Current 350 RDS(on) - On-State Resistance (mΩ) RDS(on) - On State Resistance (Normalized) 300 250 200 150 100 50 0 0 10 20 30 40 50 ID - Drain current (A) 60 70 On Resistance vs Junction Temperature 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (˚C) VGS = 10V ID = 12A VGS = 10V Gate Charge 10 VGS - Gate-to-Source Voltage (V) VGS(th) - Gate Threshold Voltage (Normalized) 9 8 7 6 5 VDS = 480V ID = 23.8A Gate Threshold Voltage vs Junction Temperature 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -50 -25 0 25 50 75 100 125 150 ID = 250μA 4 3 2 1 0 0 20 40 60 80 100 Qg - Total Gate Charge (nC) TJ - Junction Temperature (˚C) SP-60N160B-000-2a 06/05/2013 Free Datasheet http://www.datasheet4u.com/ 4 Preliminary Data Sheet ICE60N160B Capacitance 100000 V(BR)DSS - Drain-to-Source Breakdown Voltage (Normalized) Drain-to-Source Breakdown Voltage vs. Junction Temperature 1.2 10000 C-Capacitance (pF) Ciss 1.1 ID = 1mA 1000 1.0 100 Coss 0.9 10 Crss 1 0 100 200 300 400 500 VDS - Drain-to-Source Voltage (V) 600 0.8 -50 -25 0 25 50 75 100 TJ - Junction Temperature (˚C) 125 150 Maximum Rated Forward Biased Safe Operating Area 100 r(t), Transient Thermal Resistance (Normalized) Single Pulse, Tc = 25oC, Tj=150oC, VGS = 10V Transient Thermal Respo.


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