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ICE60N150 Dataheets PDF



Part Number ICE60N150
Manufacturers Icemos
Logo Icemos
Description N-Channel Enhancement Mode MOSFET
Datasheet ICE60N150 DatasheetICE60N150 Datasheet (PDF)

Preliminary Data Sheet ICE60N150 ICE60N150 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Optimized design for hard switching SMPS topologies HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 25A 650V 0.13Ω 85nC Max Min Typ Typ Qg G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR .

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Preliminary Data Sheet ICE60N150 ICE60N150 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Optimized design for hard switching SMPS topologies HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 25A 650V 0.13Ω 85nC Max Min Typ Typ Qg G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source. Maximum ratings b Parameter , at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=6A 25 75 690 A A mJ Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque a When mounted on 1inch square 2oz copper clad FR-4 I AR dv/dt limited by Tjmax VDS=480V, ID=25A, Tj=125oC Static AC (f>1Hz), Tc=25oC 6 50.0 ±20 ±30 208 -55 to +150 A V/ns VGS Ptot Tj, Tstg V W o C M 3 & 3.5 screws 60 Ncm b Preliminary Data Sheet – Specifications subject to change SP-60N150-000-3a 06/05/2013 Free Datasheet http://www.datasheet4u.com/ 1 Preliminary Data Sheet ICE60N150 Parameter Thermal characteristics Thermal resistance, junctioncase a Thermal resistance, junctionambient a Symbol Conditions Values Min Typ Max Unit RthJC RthJA leaded 1.6mm (0.063in.) from case for 10 s - - 0.6 o C/W 62 260 o Soldering temperature, wave T sold soldering only allowed at leads C Electrical characteristics b , at Tj=25oC, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V(BR)DSS VGS(th) VGS=0 V, ID=250µA VDS=VGS, ID=250µA VDS=650V, VGS=0V, o Tj=25 C VDS=650V, VGS=0V, o Tj=150 C VGS=±20 V, VDS=0V VGS=10V, ID=13A, o Tj=25 C VGS=10V, ID=13A, o Tj=150 C f=1 MHZ, open drain 650 2.5 675 3 0.1 3.5 1 µA 100 100 nA Ω 0.40 4 Ω V Zero gate voltage drain current IDSS Gate source leakage current Drain-source on-state resistance Gate resistance Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Input capacitance Output capacitance Transconductance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss Ciss Coss gfs td(on) tr td(off) tf IGSS RDS (on) - 0.13 0.15 RG VGS=0 V, VDS=25 V, f=1 MHz VGS=0 V, VDS=100 V, f=1 MHz VDS>2*ID*RDS, ID=13A VDS=380V, VGS=10V, ID=25A, RG=4Ω (External) - 2750 980 25 2740 87 25 10 5 67 4.5 - pF S ns SP-60N150-000-3a 06/05/2013 Free Datasheet http://www.datasheet4u.com/ 2 Preliminary Data Sheet ICE60N150 Parameter Gate charge characteristics Gate to source charge Gate to drain charge Gate cha.


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