Document
Preliminary Data Sheet
ICE60N150 ICE60N150 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Optimized design for hard switching SMPS topologies
HALOGEN
Product Summary ID V(BR)DSS rDS(on)
FREE
TA=25oC ID=250uA VGS=10V VDS=480V
D
25A 650V 0.13Ω 85nC
Max Min Typ Typ
Qg
G S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal Heatsink
1=Gate, 2=Drain, 3=Source.
Maximum ratings b
Parameter
, at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit
Continuous drain current
Pulsed drain current Avalanche energy, single pulse
ID
ID, pulse E AS
Tc=25oC
Tc=25oC ID=6A
25
75 690
A
A mJ
Avalanche current, repetitive
MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque
a When mounted on 1inch square 2oz copper clad FR-4
I AR
dv/dt
limited by Tjmax
VDS=480V, ID=25A, Tj=125oC Static AC (f>1Hz), Tc=25oC
6
50.0 ±20 ±30 208 -55 to +150
A
V/ns
VGS Ptot Tj, Tstg
V W
o
C
M 3 & 3.5 screws
60
Ncm
b Preliminary Data Sheet – Specifications subject to change
SP-60N150-000-3a 06/05/2013
Free Datasheet http://www.datasheet4u.com/
1
Preliminary Data Sheet
ICE60N150
Parameter Thermal characteristics Thermal resistance, junctioncase a Thermal resistance, junctionambient a Symbol Conditions Values Min Typ Max Unit
RthJC RthJA leaded 1.6mm (0.063in.) from case for 10 s
-
-
0.6
o
C/W
62 260
o
Soldering temperature, wave T sold soldering only allowed at leads
C
Electrical characteristics b , at Tj=25oC, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage V(BR)DSS VGS(th) VGS=0 V, ID=250µA VDS=VGS, ID=250µA VDS=650V, VGS=0V, o Tj=25 C VDS=650V, VGS=0V, o Tj=150 C VGS=±20 V, VDS=0V VGS=10V, ID=13A, o Tj=25 C VGS=10V, ID=13A, o Tj=150 C f=1 MHZ, open drain 650 2.5 675 3 0.1 3.5 1 µA 100 100 nA Ω 0.40 4 Ω
V
Zero gate voltage drain current IDSS Gate source leakage current Drain-source on-state resistance Gate resistance Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Input capacitance Output capacitance Transconductance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss Ciss Coss gfs td(on) tr td(off) tf IGSS RDS (on)
-
0.13
0.15
RG
VGS=0 V, VDS=25 V, f=1 MHz VGS=0 V, VDS=100 V, f=1 MHz VDS>2*ID*RDS, ID=13A VDS=380V, VGS=10V, ID=25A, RG=4Ω (External)
-
2750 980 25 2740 87 25 10 5 67 4.5
-
pF
S
ns
SP-60N150-000-3a 06/05/2013
Free Datasheet http://www.datasheet4u.com/
2
Preliminary Data Sheet
ICE60N150
Parameter Gate charge characteristics Gate to source charge Gate to drain charge Gate cha.