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ICE20N65

Part Number	ICE20N65
Manufacturer	Icemos
Description	N-Channel Enhancement Mode MOSFET
Published	Oct 8, 2013
Detailed Description	Preliminary Data Sheet ICE20N65 ICE20N65 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Char...
Datasheet	ICE20N65 PDF File

Overview

Preliminary Data Sheet ICE20N65 ICE20N65 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID rDS(on) FREE TA=25oC VGS=10V VDS=480V D 20A 700V 0.
17Ω 82nC Max Min Typ Typ BVDSS @Tjmax ID=250uA Qg G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, J...

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