N-Channel Enhancement Mode MOSFET
Preliminary Data Sheet
ICE15N60FP ICE15N60FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate ...
Description
Preliminary Data Sheet
ICE15N60FP ICE15N60FP N-Channel
Enhancement Mode MOSFET
Features
Low rDS(on) Ultra Low Gate Charge High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Increased transconductance performance Optimized design for high performance power systems
HALOGEN
Product Summary ID V(BR)DSS rDS(on)
FREE
TA=25oC ID=250uA VGS=10V VDS=480V
D
15A 600V 0.23Ω 59nC
Max Min Typ Typ
Qg
G S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK Isolated (T0-220) 1=Gate, 2=Drain, 3=Source
Maximum ratings b
Parameter
, at Tj=25oC, unless otherwise specified Symbol Conditions
Value
Unit
Continuous drain current
Pulsed drain current Avalanche energy, single pulse
ID
ID, pulse E AS
Tc=25oC
Tc=25oC ID=7.5A
15
45 460
A
A mJ
Avalanche current, repetitive
MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque
a When mounted on 1inch square 2oz copper clad FR-4
I AR
dv/dt
limited by Tjmax
VDS=480V, ID=15A, Tj=125oC Static AC (f>1Hz) Tc=25oC
7.5
50 ±20 ±30 35 -55 to +150
A
V/ns
VGS Ptot Tj, Tstg
V W
o
C
M 2.5 screws
50
Ncm
b Preliminary Data Sheet – Specifications subject to change
SP-15N60FP-000-8b 08/23/2013
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