ICE11N65FP

Preliminary Data Sheet ICE11N65FP ICE11N65FP N-Channel Enhancement Mode MOSFET Features Low rDS(on) Ultra Low Gate Charge High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Increased transconductance performance Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 11A 650V 0.25 59nC Max Min Typ Typ Qg G S ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. T0220 Full-PAK Isolated (T0-220) 1=Gate, 2=Drain, 3=Source Maximum ratings b Parameter Continuous drain current Pulsed drain current , at Tj=25°C, unless otherwise specified Symbol ID ID, pulse E AS I AR dv/dt Conditions Tc=25oC Tc=25oC ID=7.5A limited by Tjmax Value 11 35 460 7.5 50 Unit A A mJ A V/ns Avalanche energy, single pulse Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque a When mounted on 1inch square 2oz copper clad FR-4 VDS=480V, ID=11A, Tj=125oC static AC (f>1Hz) Tc=25°C VGS Ptot Tj, Tstg ±20 ±30 35 -55 to +150 V W °C Ncm M 2.5 screws 50 b Preliminary Data Sheet – Specifications subject to change SP-11N65FP-000-3a 06/13/2013 Free Datasheet http://www.datas...