Document
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HC1417
¨€ APPLICATIONS
High Frequency Amplifier Application.
¨€
ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£©
TO-92
T stg ¡ ª ¡ ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-55~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ PC¡ª¡ªCollector Dissipation¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡625mW VCBO ¡ ª ¡ ªCollector-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡20V VCEO ¡ª¡ª Collector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡15V VE B O ¡ ª ¡ ªEmitter -Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡3V I C ¡ ª ¡ ªCollector Current ¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡30mA ¨€ 1¨D Emitter£¬ E 2¨D Collector£¬ C 3¨D Base£¬ B
ELECTRICAL CHARACTERISTICS£¨ Ta=25¡æ£©
Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Min 20 15 3 0.1 Typ Max Unit V V V ¦Ì A Test Conditions IC =100 ¦Ì A£¬ I E=0 IC =1mA £¬ IB =0 I E=10 0¦Ì A£¬ IC =0 VCB =10V, I E=0
Symbol
BVCBO BVCEO ICBO IEBO HFE
BVEBO Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current DC Current Gain 54
0.1 146 0.5 1.42
10 0 300
¦Ì A V V
MHz
V EB =3V, I C =0 V CE =6V, I C =1mA IC =10mA, I B =1mA IC =10mA, I B =1mA
VCE =10V, I C =50mA
VCE(sat) Collector- Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage fT Cob NF
Current Gain-Bandwidth Product
Output Capacitance Noise Figure
1.4 5.5
pF dB
V CB =10V,I E =0£¬ f=1MHz V =6V,I C =1mA,R =50O CE G
¨€ hFE Classification
F 54 ¡ª 80
G 72 -- 10 8
H 97 -- 146
FreeDatasheethttp://www.datasheet4u.com/
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