MT4435L2

Mos-Tech Semiconductor Co.,LTD. MT4435L2 P-Channel Enhancement Mode Field Effect Transistor FEATURES ● ● ● ● Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement TO-252 package PRODUCT SUMMARY VDSS -30V ID -7A RDS(ON) (mΩ) Typ 98@ VGS=-10V 130 @ VGS=-4.5V D S NOTE：The MT4435L2 is available in a lead-free package G G S D ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ - Pulse d b Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit -30 ±20 -7 -24 -1.8 50 -55 to 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 50 ℃/W ©2005 Mos-Tech Semiconductor 1 http//www.mtsemi.com Free Datasheet http://www.datasheet4u.com/ Mos-Tech Semiconductor Co.,LTD. MT4435L2 ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERITICS Symbol Condition Min Typ Max Unit BVDSS IDSS IGSS VGS=0V,ID=-250µA VDS=-24V,VGS=0V VGS=±20V,VDS=0V -30 -1 ±100 V µA nA Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DAYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISISTICS Turn-On Delay Time Ri...