2N2907A

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 30 Philips Semiconductors Product specification PNP switching transistors FEATURES High current (max. 600 mA) Low voltage (max. 60 V). APPLICATIONS Switching and linear amplification. DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. 3 2N2907; 2N2907A PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 1 handbook, halfpage 2 3 2 MAM263 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage collector-emitter voltage 2N2907 2N2907A IC Ptot hFE fT toff collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = −150 mA; VCE = −10 V IC = −50 mA; VCE = −20 V; f = 100 MHz open emitter open base − − − − 100 200 −40 −60 −600 400 300 − 300 MHz ns V V mA mW CONDITIONS − MIN. MAX. −60 V UNIT ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA − 1997 May 30 2 Philips Semiconductors Product specification PNP switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage collector-emitter voltage 2N2907 2N2907A VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak...