N-Channel MOSFET
FDMC86240 N-Channel Shielded Gate PowerTrench® MOSFET
June 2014
FDMC86240
N-Channel Shielded Gate PowerTrench® MOSFET
...
Description
FDMC86240 N-Channel Shielded Gate PowerTrench® MOSFET
June 2014
FDMC86240
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 16 A, 51 mΩ
Features
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application
DC - DC Conversion
Top
Bottom
Pin 1
S
D
SS S G
S
D
S
D
D
D
G
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a) (Note 3)
(Note 1a)
Ratings 150 ±20 16 4.6 20 34 40 2.3
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3.1
(Note 1a)
53
°C/W
Device Marking FDMC86240
Device FDMC86240
Package Power 33
Reel Size 13 ’’
Tape Width 12 mm
Quantity 3000 units
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