2SC3230

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 30V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1276 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3230 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3230 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 2V ICBO Collector Cutoff Current VCB= 20V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 2V hFE-2 DC Current Gain IC= 2.5A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 2V COB Output Capacitance IE=0; VCB= 10V; ftest= 1.0MHz MIN TYP. MAX UNIT 30 V 5 V 0.8 V 1.0 V 1.0 μA 1.0 μA 70 240 25 100 M...