Document
UNISONIC TECHNOLOGIES CO., LTD
UD606
DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)
Power MOSFET
DESCRIPTION
The UD606 can provide excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The UD606 may be used in H-bridge, inverters and other applications.
FEATURES
* N-Channel: 40V/8A RDS(ON) ≤ 33 mΩ @ VGS =10V, ID=8.0A RDS(ON) ≤ 55 mΩ @ VGS= 4.5V, ID=6.0A * P-Channel: -40V/-8A RDS(ON) ≤ 50 mΩ @ VGS= -10V, ID=-8.0A RDS(ON) ≤ 70 mΩ @ VGS= -4.5V, ID=-4.0A * Super high dense cell design * Reliable and rugged
SYMBOL
1 1
SOP-8 TO-252-5 PDFN5×6
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UD606L-TN5-R
UD606G-TN5-R
TO-252-5
UD606L-S08-R
UD606G-S08-R
SOP-8
UD606L-P5060-R
UD606G-P5060-R PDFN5×6
Note: Pin Assignment: G: Gate D: Drain S: Source
12
Pin Assignment 3 45678
Packing
S1 G1 D1/D2 S2 G2 - - - Tape Reel
S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel
S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel
www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd
1 of 11
QW-R502-169.E
UD606
MARKING
PACKAGE TO-252-5
SOP-8
PDFN5×6
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 11
QW-R502-169.E
UD606
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
N-Channel: PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note3) Pulsed Drain Current (Note3)
Power Dissipation
Junction Temperature Storage Temperature
TC=25°C TC=25°C TO-252-5 SOP-8 PDFN5×6
SYMBOL VDSS VGSS ID IDM
PD
TJ TSTG
RATINGS 40 ±20 8 30 2 1.25 1.57
+175 -55 ~ +175
UNIT V V A A W W W °C °C
P-Channel:
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note3)
TC=25°C
ID
-8
A
Pulsed Drain Current (Note3)
TC=25°C
IDM
TO-252-5
-30
A
2
W
Power Dissipation
SOP-8
PD
PDFN5×6
1.25
W
1.57
W
Junction Temperature Storage Temperature
TJ
+175
°C
TSTG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
TO-252-5
50
60
N-Channel SOP-8
70
100
Junction to Ambient
PDFN5×6 TO-252-5
θJA
65
80
40
50
P-Channel SOP-8
68
100
PDFN5×6
63
80
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNIT °C/W °C/W °C/W °C/W °C/W °C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 11
QW-R502-169.E
UD606
Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-CHANNEL PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current
BVDSS IDSS IGSS
VGS=0V, ID=250uA VDS=32V, VGS=0V VDS=0V, VGS=±20V
ON CHARACTERISTICS Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
VGS(TH) RDS(ON)
VDS=VGS, ID=250uA VGS=10V, ID=8.0A VGS=4.5V, ID=6.0A
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VGS=0V,VDS=20V, f=1MHz
SWITCHING CHARACTERISTICS Total Gate Charge (Note2) Gate-Source Charge Gate-Drain Charge Turn-ON Delay Time (Note2) Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall Time
QG QGS QGD tD(ON) tR tD(OFF)
tF
VDS=20V, VGS=10V, ID=8A
VDS=20V, VGS=10V, RG=3Ω ID=1A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Continuous Forward Current
IS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=1A, VGS=0V
Reverse Recovery Time Reverse Recovery Charge
trr Qrr
IF=8A, dI/dt=100A/μs
MIN TYP MAX UNIT
40
V
1 uA
±100 nA
1.0 2.3 3.0 V 33 mΩ 55 mΩ
580
pF
100
pF
87
pF
85
nC
9
nC
7
nC
30
ns
30
ns
140
ns
70
ns
8A
0.76 1 V
22.9
ns
18.3
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 11
QW-R502-169.E
UD606
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
P-CHANNEL PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current
BVDSS IDSS IGSS
VGS=0V, ID=-250uA VDS=-32V, VGS=0V VDS=0V, VGS=±20V
ON CHARACTERISTICS Gate Threshold Voltage
Drain-Source On-State Resistance (Note2)
VGS(TH) RDS(ON)
VDS=VGS, ID=-250uA VGS=-10V, ID=-8.0A VGS=-4.5V, ID=-4.0A
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VGS=0V, VDS=-20V, f=1.0MHz
SWITCHING CHARACTERISTICS Total Gate Charge (Note2) Gate-Source Charge Gate-Drain Charge Turn-ON Delay Time (Note2) Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall Time
QG QGS QGD tD(ON) tR tD(OFF)
tF
VDS=-20V, VGS=-10V, ID=-8A
VDS=-20V, VGS=-10V, RG=3Ω, RL=2.5Ω
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Continuous Forward Current
IS
Drain-Source Diode Forward Voltage(Note2)
VSD.