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UD606 Dataheets PDF



Part Number UD606
Manufacturers UTC
Logo UTC
Description Power MOSFET
Datasheet UD606 DatasheetUD606 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UD606 DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) Power MOSFET  DESCRIPTION The UD606 can provide excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The UD606 may be used in H-bridge, inverters and other applications.  FEATURES * N-Channel: 40V/8A RDS(ON) ≤ 33 mΩ @ VGS =10V, ID=8.0A RDS(ON) ≤ 55 mΩ @ VGS= 4.5V, ID=6.0A * P-Channel: -40V/-8A RDS(ON) ≤ 50 mΩ @ VGS= -10V, ID=-8.0A RDS(ON) ≤ 70 mΩ @ VGS= -4.5V, ID=-4.0A * Super high .

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UNISONIC TECHNOLOGIES CO., LTD UD606 DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) Power MOSFET  DESCRIPTION The UD606 can provide excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The UD606 may be used in H-bridge, inverters and other applications.  FEATURES * N-Channel: 40V/8A RDS(ON) ≤ 33 mΩ @ VGS =10V, ID=8.0A RDS(ON) ≤ 55 mΩ @ VGS= 4.5V, ID=6.0A * P-Channel: -40V/-8A RDS(ON) ≤ 50 mΩ @ VGS= -10V, ID=-8.0A RDS(ON) ≤ 70 mΩ @ VGS= -4.5V, ID=-4.0A * Super high dense cell design * Reliable and rugged  SYMBOL 1 1 SOP-8 TO-252-5 PDFN5×6  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UD606L-TN5-R UD606G-TN5-R TO-252-5 UD606L-S08-R UD606G-S08-R SOP-8 UD606L-P5060-R UD606G-P5060-R PDFN5×6 Note: Pin Assignment: G: Gate D: Drain S: Source 12 Pin Assignment 3 45678 Packing S1 G1 D1/D2 S2 G2 - - - Tape Reel S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 11 QW-R502-169.E UD606  MARKING PACKAGE TO-252-5 SOP-8 PDFN5×6 MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 11 QW-R502-169.E UD606 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) N-Channel: PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note3) Pulsed Drain Current (Note3) Power Dissipation Junction Temperature Storage Temperature TC=25°C TC=25°C TO-252-5 SOP-8 PDFN5×6 SYMBOL VDSS VGSS ID IDM PD TJ TSTG RATINGS 40 ±20 8 30 2 1.25 1.57 +175 -55 ~ +175 UNIT V V A A W W W °C °C P-Channel: PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note3) TC=25°C ID -8 A Pulsed Drain Current (Note3) TC=25°C IDM TO-252-5 -30 A 2 W Power Dissipation SOP-8 PD PDFN5×6 1.25 W 1.57 W Junction Temperature Storage Temperature TJ +175 °C TSTG -55 ~ +175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER SYMBOL MIN TYP MAX TO-252-5 50 60 N-Channel SOP-8 70 100 Junction to Ambient PDFN5×6 TO-252-5 θJA 65 80 40 50 P-Channel SOP-8 68 100 PDFN5×6 63 80 Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. UNIT °C/W °C/W °C/W °C/W °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 11 QW-R502-169.E UD606 Power MOSFET  ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) N-CHANNEL PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current BVDSS IDSS IGSS VGS=0V, ID=250uA VDS=32V, VGS=0V VDS=0V, VGS=±20V ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note2) VGS(TH) RDS(ON) VDS=VGS, ID=250uA VGS=10V, ID=8.0A VGS=4.5V, ID=6.0A DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VGS=0V,VDS=20V, f=1MHz SWITCHING CHARACTERISTICS Total Gate Charge (Note2) Gate-Source Charge Gate-Drain Charge Turn-ON Delay Time (Note2) Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall Time QG QGS QGD tD(ON) tR tD(OFF) tF VDS=20V, VGS=10V, ID=8A VDS=20V, VGS=10V, RG=3Ω ID=1A SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Continuous Forward Current IS Drain-Source Diode Forward Voltage(Note2) VSD IS=1A, VGS=0V Reverse Recovery Time Reverse Recovery Charge trr Qrr IF=8A, dI/dt=100A/μs MIN TYP MAX UNIT 40 V 1 uA ±100 nA 1.0 2.3 3.0 V 33 mΩ 55 mΩ 580 pF 100 pF 87 pF 85 nC 9 nC 7 nC 30 ns 30 ns 140 ns 70 ns 8A 0.76 1 V 22.9 ns 18.3 nC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 11 QW-R502-169.E UD606 Power MOSFET  ELECTRICAL CHARACTERISTICS(Cont.) P-CHANNEL PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current BVDSS IDSS IGSS VGS=0V, ID=-250uA VDS=-32V, VGS=0V VDS=0V, VGS=±20V ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note2) VGS(TH) RDS(ON) VDS=VGS, ID=-250uA VGS=-10V, ID=-8.0A VGS=-4.5V, ID=-4.0A DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VGS=0V, VDS=-20V, f=1.0MHz SWITCHING CHARACTERISTICS Total Gate Charge (Note2) Gate-Source Charge Gate-Drain Charge Turn-ON Delay Time (Note2) Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall Time QG QGS QGD tD(ON) tR tD(OFF) tF VDS=-20V, VGS=-10V, ID=-8A VDS=-20V, VGS=-10V, RG=3Ω, RL=2.5Ω SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Continuous Forward Current IS Drain-Source Diode Forward Voltage(Note2) VSD.


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