MCR100-6

isc Thyristors FEATURES ·With TO-92 package ·Sensitive gate trigger current ·Low reverse and forward blocking current ·Low holding current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN VDRM Repetitive peak off-state voltage 400 VRRM Repetitive peak off-state voltage 400 IT(RMS) RMS on-state current(180°conduction angle) ITSM Non-repetitive peak on-state current((tp=10ms)) IT(AV) Average on-state current IGM Peak gate current((tp=20μs)) I2t I2t(tp=10ms) PGM Peak gate power PG(AV) Average gate power Tj Operating junction temperature -40 Tstg Storage temperature range -40 Thermal resistance SYMBOL PARAMETER Rth (j-c) Junction to case Rth (j-a) Junction to ambient air MCR100-6 MAX 0.8 8 0.5 1 0.35 2 0.1 110 150 MAX 60 150 UNIT V V A A A A A2S W W ℃ ℃ UNIT k/w k/w isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Thyristors MCR100-6 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR= VRRM VR= VRRM; Tj= 110℃ VD= VDRM VD= VDRM; Tj= 110℃ 10 100 μA 10 100 μA IGT Gate trigger current VD= 7V; RL=100Ω 200 μA VTM On-state voltage IT=1.0A,tp=380μs 1.7 V IH Holding current IT=0.1A, Gate Open 1 5 mA VGT Gate trigger voltage VD= 7V; RL=100Ω 0.8 V NOTICE： ISC reserves the r...