Document
2SK3686-01
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET
200509
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Ratings Unit V 600 V 600 A Continuous drain current ±16 A Pulsed drain current ±64 V Gate-source voltage ±30 A Repetitive or non-repetitive 16 mJ Maximum avalanche energy 242.7 kV/μ s Maximum drain-source dV/dt 20 kV/μ s Peak diode recovery dV/dt 5 Max. power dissipation 2.02 W 270 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=1.74mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch< =150°C < 600V *5 VGS=-30V *3 IF< = BVDSS, Tch < = 150°C *4 VDS = = -ID, -di/dt=50A/μs, Vcc < Item Drain-source voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge
Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=600V VGS=0V Tch=25°C Tch=125°C VDS=480V VGS=0V VGS=±30V VDS=0V ID=8A VGS=10V ID=8A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=8A VGS=10V RGS=10 Ω VCC =300V ID=16A VGS=10V L=1.74mH Tch=25°C IF=16A VGS=0V Tch=25°C IF=16A VGS=0V -di/dt=100A/μs Tch=25°C
600 3.0
10 0.42 6.5 13 1590 2390 200 300 11 17 29 43.5 16 24 58 87 8 12 34 51 12 18 10 15 16 1.00 1.50 0.68 7.8
5.0 25 250 100 0.57
V V μA nA Ω S pF
ns
nC
A V μs μC
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
0.463 62.0
Units
°C/W °C/W
http://www.fujielectric.co.jp/fdt/scd/
Free Datasheet http://www.datasheet4u.com/
1
2SK3686-01
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
400
50
Typical Output Characteristics ID=f(VDS):80 μs pulse test,Tch=25 °C
40
300
PD [W]
200
ID [A]
30
20V 10V 8V 7V
20 6.5V 10 VGS=6.0V
100
0
0
0
25
50
75
100
125
150
0
4
8
12
16
20
24
Tc [°C]
VDS [V]
100
Typical Transfer Characteristic ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25 °C
100
Typical Transconductance gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25 °C
10
10
ID[A]
1
gfs [S]
1
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1 0.1
1
10
100
VGS[V]
ID [A]
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μs pulse test,Tch=25 °C
VGS=6V 6.5V
1.5 1.4 1.3
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V
7V 8V 10V 20V
1.2 1.1
RDS(on) [ Ω ]
RDS(on) [ Ω ]
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 typ. max.
0
10
20
30
0.0
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [°C]
Free Datasheet http://www.datasheet4u.com/
2
2SK3686-01
FUJI POWER MOSFET
7.0 6.5 6.0 5.5
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250μA
14
Typical Gate Charge Characteristics VGS=f(Qg):ID=16A,Tch=25 °C
12 Vcc= 120V
VGS(th) [V]
5.0 4.5
max.
10 480V
300V
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 min.
VGS [V]
4.0
8
6
4
2
0
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
Tch [°C]
Qg [nC]
10
4
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
100
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 μs pulse test,Tch=25 °C
Ciss 10
3
10
C [pF]
10
2
Coss
IF [A]
1
10
1
Crss
10
0
10
0
10
1
10
2
10
3
0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
700
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=16A
600
IAS=7A
500
10
2
td(off) td(on)
EAV [mJ]
400
IAS=10A
t [ns]
300 IAS=16A 200
10
1
tr
tf
100
10
0
0
-1
10
10
0
10
1
10
2
0
25
50
75
100
125
150
ID [A]
starting Tch [°C]
Free Datasheet http://www.datasheet4u.com/
3
2SK3686-01
FUJI POWER MOSFET
10
2
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=50V
Single Pulse
Avalanche Current I AV [A]
10
1
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
10
1
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [.