DatasheetsPDF.com

K3686-01 Dataheets PDF



Part Number K3686-01
Manufacturers Fuji Electric
Logo Fuji Electric
Description 2SK3686-01
Datasheet K3686-01 DatasheetK3686-01 Datasheet (PDF)

2SK3686-01 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 600 V 600 A Continuous drain current ±16 A Pulsed drain current ±64 V Gate-so.

  K3686-01   K3686-01



Document
2SK3686-01 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 600 V 600 A Continuous drain current ±16 A Pulsed drain current ±64 V Gate-source voltage ±30 A Repetitive or non-repetitive 16 mJ Maximum avalanche energy 242.7 kV/μ s Maximum drain-source dV/dt 20 kV/μ s Peak diode recovery dV/dt 5 Max. power dissipation 2.02 W 270 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=1.74mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch< =150°C < 600V *5 VGS=-30V *3 IF< = BVDSS, Tch < = 150°C *4 VDS = = -ID, -di/dt=50A/μs, Vcc < Item Drain-source voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=600V VGS=0V Tch=25°C Tch=125°C VDS=480V VGS=0V VGS=±30V VDS=0V ID=8A VGS=10V ID=8A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=8A VGS=10V RGS=10 Ω VCC =300V ID=16A VGS=10V L=1.74mH Tch=25°C IF=16A VGS=0V Tch=25°C IF=16A VGS=0V -di/dt=100A/μs Tch=25°C 600 3.0 10 0.42 6.5 13 1590 2390 200 300 11 17 29 43.5 16 24 58 87 8 12 34 51 12 18 10 15 16 1.00 1.50 0.68 7.8 5.0 25 250 100 0.57 V V μA nA Ω S pF ns nC A V μs μC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.463 62.0 Units °C/W °C/W http://www.fujielectric.co.jp/fdt/scd/ Free Datasheet http://www.datasheet4u.com/ 1 2SK3686-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 400 50 Typical Output Characteristics ID=f(VDS):80 μs pulse test,Tch=25 °C 40 300 PD [W] 200 ID [A] 30 20V 10V 8V 7V 20 6.5V 10 VGS=6.0V 100 0 0 0 25 50 75 100 125 150 0 4 8 12 16 20 24 Tc [°C] VDS [V] 100 Typical Transfer Characteristic ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25 °C 100 Typical Transconductance gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25 °C 10 10 ID[A] 1 gfs [S] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 1 10 100 VGS[V] ID [A] 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μs pulse test,Tch=25 °C VGS=6V 6.5V 1.5 1.4 1.3 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V 7V 8V 10V 20V 1.2 1.1 RDS(on) [ Ω ] RDS(on) [ Ω ] 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 typ. max. 0 10 20 30 0.0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [°C] Free Datasheet http://www.datasheet4u.com/ 2 2SK3686-01 FUJI POWER MOSFET 7.0 6.5 6.0 5.5 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250μA 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=16A,Tch=25 °C 12 Vcc= 120V VGS(th) [V] 5.0 4.5 max. 10 480V 300V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 min. VGS [V] 4.0 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 Tch [°C] Qg [nC] 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 μs pulse test,Tch=25 °C Ciss 10 3 10 C [pF] 10 2 Coss IF [A] 1 10 1 Crss 10 0 10 0 10 1 10 2 10 3 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω 700 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=16A 600 IAS=7A 500 10 2 td(off) td(on) EAV [mJ] 400 IAS=10A t [ns] 300 IAS=16A 200 10 1 tr tf 100 10 0 0 -1 10 10 0 10 1 10 2 0 25 50 75 100 125 150 ID [A] starting Tch [°C] Free Datasheet http://www.datasheet4u.com/ 3 2SK3686-01 FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=50V Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [.


APM2558NU K3686-01 MF70


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)