P1004BD

NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1004BD TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 10mΩ ID 55A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range 2 1 SYMBOL VDS VGS LIMITS 40 ±20 55 44 120 38 73 50 32 -55 to 150 UNITS V V TC = 25 °C TC = 70 °C ID IDM IAS A L = 0.1mH TC = 25 °C TC = 70 °C EAS PD TJ, Tstg mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1 2 SYMBOL RθJA RθJC TYPICAL MAXIMUM 62.5 2.5 UNITS °C / W Pulse width limited by maximum junction temperature. VDD = 20V . Starting TJ = 25˚C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 55 °C 40 1.7 2.0 3.0 ±100 1 10 µA nA V LIMITS UNIT MIN TYP MAX REV 1.3 Mar-18-2010 1 Free Datasheet http://www.datasheet4u.com/ NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P1004BD TO-252 Halogen-Free & Lead-Free Drain-Source On-State 1 Resistance Forward Transconductance...