2N2894

2N2894 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) PNP SILICON TRANSISTOR FEATURES SILICON PNP TRANSISTOR HIGH SPEED, LOW SATURATION SWITCH 5.33 (0.210) 4.32 (0.170) 0.48 (0.019) 0.41 (0.016) dia. 12.7 (0.500) min. APPLICATIONS: GENERAL PURPOSE SWITCHING APPLICATIONS 2.54 (0.100) Nom. 3 2 1 TO18 Underside View PIN 2 – BASE PIN1 – EMITER PIN 3 – COLLECTOR ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TSTG , TJ Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation Total Device Dissipation @ TA =25°C Derate above 25°C @ TC =25°C Derate above 25°C Operating and Storage Temperature Range Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 12V 12V 4V 200mA 360mW 2.06mW / °C 12W 6.85mW / °C –65 to +200°C Semelab plc. Prelim. 4/99 2N2894 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter BVCEO(SUS) Collector – Base BreakdownVoltage BVCES BVCBO BVEBO ICBO ICES IB VCE(sat) Collector – Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Base Current Collector – Emitter Saturation Voltage Test Conditions IC = 10mA IC = 10mA IE = 100mA VCB = 6V VCE = 6V VCE = 6V IC = 10mA IC = 30mA IC = 100mA IC = 10mA IB = 0 VBE = 0 IE = 0 IC = 0 Tamb = 125°C VBE = 0 VBE = 0 IB = 1mA IB = 3mA I...