DB2X41100L

Doc No. TT4-EA-13670 Revision. 3 Product Standards Schottky Barrier Diode DB2X41100L DB2X41100L Silicon epitaxial planar type For rectification DB2J411 in Mini2 type package  Features  Low forward voltage and low reverse leakage current  Short reverse recovery time trr  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Unit: mm 1.6 2 0.13  Marking Symbol: 4R  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1 0.55 1. Cathode 2. Anode Panasonic JEITA Code 2.6 3.5 0.8  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Reverse voltage Forward current (average) *1 Non-repetitive peak forward surge current Junction temperature *1 Operating ambient temperature Storage temperature Note: *2 Mini2-F4-B SC-109D SOD-123 Rating 40 1 7 150 -40 to +85 -55 to +150 Unit V A A °C °C °C VR IF(AV) IFSM Tj Topr Tstg Internal Connection 2 *1 Tl = 80 °C *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) 1 Page 1 of 4 Established : 2011-06-30 Revised : 2013-04-24 Free Datasheet http://www.datasheet4u.com/ Doc No. TT4-EA-13670 Revision. 3 Product Standards Schottky Barrier Diode DB2X41100L  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Forward voltage Reverse current Terminal capacitance Reverse recovery time VF IR Ct trr Conditions IF = 1 A VR = 40 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 0.1 × IR Min Typ 0.50 15 21 6.8 Max 0.58 100 Unit V μA pF ns *1 Note) 1. Measuring m...