ALD210800A

ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD210800A/ALD210800 PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR VGS(th)= +0.00V GENERAL DESCRIPTION The ALD210800A/ALD210800 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110800A/ ALD110800 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD210800A/ ALD210800 features Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a nanopower input amplifier stage operating at less than 0.2V supply voltage has been successfully built with these devices. ALD210800A EPAD MOSFETs feature exceptional matched pair device electrical characteristics of Gate Threshold Voltage VGS(th) set precisely at 0.00V +0.01V, IDS = +10µA @ VDS = 0.1V, with a typical offset voltage of only +0.001V (1mV). Built on a single monolithic chip, they also exhibit excellent temperature tracking characteristics. These precision devices are versatile as design components for a broad range of analog small signal applica...