FDMS7558S

FDMS7558S N-Channel PowerTrench®SyncFET FDMS7558S N-Channel PowerTrench® SyncFETTM 25 V, 49 A, 1.25 mΩ October 2014 Features „ Max rDS(on) = 1.25 mΩ at VGS = 10 V, ID = 32 A „ Max rDS(on) = 1.75 mΩ at VGS = 4.5 V, ID = 28 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description The FDMS7558S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications „ Synchronous Rectifier for Synchronous Buck Converters „ Notebook „ Server „ Telecom „ High Efficiency DC-DC Switch Mode Power Supplies Top Bottom Pin 1 S D5 S S G D6 Power 56 D D D D D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 4) (Note 1a) (Note 3) (Note 1a) Ratings 25 ±20 49 199 32 180 288 89 2.5 -5...