FDMC8651

FDMC8651 N-Channel Power Trench® MOSFET July 2008 FDMC8651 N-Channel Power Trench® MOSFET 30 V, 20 A, 6.1 mΩ Features „ Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 15 A „ Max rDS(on) = 9.3 mΩ at VGS = 2.5 V, ID = 12 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant General Description This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic-level device. Applications „ Synchronous rectifier „ 3.3 V input synchronous buck switch Top Bottom S Pin 1 S S D G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 30 ±12 20 64 15 60 128 41 2.3 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Ther...