N-Channel Power Trench MOSFET
FDMC86160 N-Channel Power Trench® MOSFET
January 2013
FDMC86160
N-Channel Power Trench® MOSFET
100 V, 43 A, 14 mΩ
Feat...
Description
FDMC86160 N-Channel Power Trench® MOSFET
January 2013
FDMC86160
N-Channel Power Trench® MOSFET
100 V, 43 A, 14 mΩ
Features
Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ulta low RDS (on) is required in small spaces such as High performance VRM, POL and orring functions.
Applications
Bridge Topologies Synchronous Rectifier
Pin 1 Pin 1 S S S S G S S D D D G D D D D
D
Top
Bottom
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TA = 25 °C (Note 1a) Ratings 100 ±20 43 9 50 181 54 2.3 -55 to +150 mJ W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 2.3 53 °C/W
Package Marking and Ordering Information
Device Marking FDMC86160 Device FDMC86160 Package Power33 Reel Size 13 ’’ Tape ...
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