N-Channel Power Trench MOSFET
FDMC86106LZ N-Channel Power Trench® MOSFET
December 2010
FDMC86106LZ
N-Channel Power Trench® MOSFET
100 V, 7.5 A, 103 ...
Description
FDMC86106LZ N-Channel Power Trench® MOSFET
December 2010
FDMC86106LZ
N-Channel Power Trench® MOSFET
100 V, 7.5 A, 103 mΩ
Features
Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A HBM ESD protection level > 3 KV typical (Note 4) 100% UIL Tested RoHS Compliant
General Description
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
Application
DC - DC Conversion
Top Pin 1 S S S G
Bottom 5 6 7 8
D D D D D
4 3 2 1
G S S S
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 100 ±20 7.5 9.6 3.3 15 12 19 2.3 -55 to +150 mJ W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 6.5 53 °C/W
Package Marking and Ordering Information
Device Marking FDMC86106Z Device FDMC86106LZ Package Power 33 Reel S...
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