C1674

Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1674 FEATURE Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 0. 25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.02 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Noise figure Power gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(ON) 3. BASE . 1 2 3 unless otherwise specified) Test conditions MIN 30 20 4 0.1 0.1 40 180 0.3 0.72 400 1.5 5 18 V V MHz MAX UNIT V V V µA µA Ic= 100µA , IE=0 IC= 1 mA, IB=0 IE= 100µA, IC=0 VCB= 30V, IE=0 VEB=3V , IC=0 VCE=6 V, IC= 1mA IC=10 mA, IB= 1 mA VCE=6 V, IC= 1mA VCE=6 V, IC= 1mA VCE=6V, IE=0, f=1MHz VCE=6V, IC=1mA, f=100MHz, RS=50Ω VCE=6V,IC=1mA,f=100MHz fT Cob NF GP pF dB dB CLASSIFICATION OF hFE(1) Rank Range Y 40-80 GR 60-120 BL 90-180 ...