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MJE200
Silicon NPN Power Transistor
Description
isc Silicon
NPN
Power
Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min) ·DC Current Gain- : hFE = 70(Min) @ IC= 500mA ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)@ IC = 500mA ·High Current-Gain—Bandwidth Product fT= 65MHz(Min) @ IC= 100mA ·Minimum Lot-to-Lot variations for robust device performance and ...
Inchange Semiconductor
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