MSD6150

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MSD6150/D Dual Diode Common Anode MSD6150 3 Anode 1 2 3 CASE 29–04, STYLE 4 TO–92 (TO–226AA) Cathode 1 2 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Peak Forward Recurrent Current Peak Forward Surge Current (Pulse Width = 10 µsec) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VR IF IFM(surge) PD(1) TJ, Tstg(1) Value 70 200 500 625 5.0 – 55 to +135 Unit Vdc mAdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Breakdown Voltage (I(BR) = 100 µAdc) Reverse Current (VR = 50 Vdc) Forward Voltage (IF = 10 mAdc) Capacitance (VR = 0) Reverse Recovery Time (IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc) Symbol V(BR) IR VF C trr Min 70 — — — — Typ — — 0.80 5.0 — Max — 0.1 1.0 8.0 100 Unit Vdc µAdc Vdc pF ns 1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C, Derate above 8.0 mW/°C, PD = 10 W @ TC = 25°C, Derate above 80 mW/°C, TJ, Tstg = –55 to +150°C, θJC = 12.5°C/W, θJA = 125°C. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 Free Datasheet http://www.datasheet4u.com/ MSD6150 TYPICAL CHARACTERISTICS Curves Applicable to Each Cathode 100 IF, FORWARD CURRENT (mA) TA = 85°C 10 TA = – 40°C IR , REVERSE CURRENT (µA) 10 TA = 150°C 1.0 TA = 125°C 0.1 TA = 85°C TA = 55°C 1.0 ...