MSD6100

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MSD6100/D Dual Switching Diode Common Cathode MSD6100 Anode 1 2 Anode 1 2 3 3 Cathode CASE 29–04, STYLE 3 TO–92 (TO–226AA) MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current (Pulse Width = 10 µsec) Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VR IF IFM(surge) PD(1) TJ, Tstg(1) Value 100 200 500 625 5.0 – 55 to +135 Unit Vdc mAdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Breakdown Voltage (I(BR) = 100 µAdc) Reverse Current (VR = 100 Vdc) (VR = 50 Vdc) (VR = 50 Vdc, TA = 125°C) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 100 mAdc) Capacitance (VR = 0) Reverse Recovery Time (IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc) Symbol V(BR) IR — — — VF 0.55 0.67 0.75 C trr — — 0.7 0.82 1.1 1.5 4.0 pF ns 5.0 0.1 50 Vdc Min 100 Max — Unit Vdc µAdc 1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C, Derate above 25°C  8.0 mW/°C, TJ = –65 to +150°C, θJC = 125°C/W. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 Free Datasheet http://www.datasheet4u.com/ MSD6100 TYPICAL CHARACTERISTICS Curves Applicable to Each Anode 100 IF, FORWARD CURRENT (mA) TA = 85°C 10 TA = – 40°C IR , REVERSE CURRENT (µA) 10 TA = 150°C 1.0 TA = 125°...