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SSM3J134TU Dataheets PDF



Part Number SSM3J134TU
Manufacturers Toshiba
Logo Toshiba
Description Silicon P-Channel MOSFET
Datasheet SSM3J134TU DatasheetSSM3J134TU Datasheet (PDF)

SSM3J134TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J134TU ○ Power Management Switch Applications • 1.5 V drive • Low ON-resistance: RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -20 V Gate-Source voltage VGSS ±8 V Drain current DC ID .

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SSM3J134TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J134TU ○ Power Management Switch Applications • 1.5 V drive • Low ON-resistance: RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -20 V Gate-Source voltage VGSS ±8 V Drain current DC ID (Note 1) -3.2 A Pulse IDP (Note 1) -6.4 Power dissipation PD (Note 2) 500 mW t < 1s 1000 Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150°C during use. Note 2: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) UFM 1: Gate 2: Source 3: Drain JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.6mg (typ.) Marking 3 Equivalent Circuit (top view) 3 JJM 1 2 1 2 Start of commercial production 2011-02 1 2014-03-01 SSM3J134TU Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit Drain-source breakdown voltage V (BR) DSS ID = -1 mA, VGS = 0 V V (BR) DSX ID = -1 mA, VGS = 5 V -20 ⎯ ⎯ V .(Note 4) -15 ⎯ ⎯ V Drain cut-off current IDSS VDS = -20 V, VGS = 0 V ⎯ ⎯ -1 μA Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = -3 V, ID = -1 mA -0.3 ⎯ -1.0 V Forward transfer admittance ⏐Yfs⏐ VDS = -3 V, ID = -1.0 A (Note 3) 2.9 5.8 ⎯ S ID = -1.5 A, VGS = -4.5 V (Note 3) ⎯ 78.5 93 Drain–source ON-resistance RDS (ON) ID = -1.0 A, VGS = -2.5 V ID = -0.5 A, VGS = -1.8 V (Note 3) ⎯ 97.5 123 mΩ (Note 3) ⎯ 120 168 ID = -0.25 A, VGS = -1.5 V (Note 3) ⎯ 141 240 Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VDS = -10 V, VGS = 0 V f = 1 MHz ⎯ 290 ⎯ ⎯ 44 ⎯ pF ⎯ 32 ⎯ Switching time Turn-on time Turn-off time ton VDD = -10 V, ID = -0.5 A toff VGS = 0 to -2.5 V, RG = 4.7 Ω ⎯ 12 ⎯ ns ⎯ 46.2 ⎯ Total gate charge Gate-source charge Gate-drain charge Qg Qgs1 Qgd VDD = -10 V, ID = -2.0 A, VGS = -4.5 V ⎯ 4.7 ⎯ ⎯ 0.4 ⎯ nC ⎯ 1.0 ⎯ Drain-source forward voltage VDSF ID = 3.2 A, VGS = 0 V (Note 3) ⎯ 0.9 1.2 V Note 3: Pulse test Note 4: If a forward bias is applied between gate and sour.


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