Document
SSM3J134TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J134TU
○ Power Management Switch Applications
• 1.5 V drive • Low ON-resistance: RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDSS
-20
V
Gate-Source voltage
VGSS
±8
V
Drain current
DC
ID (Note 1)
-3.2
A
Pulse
IDP (Note 1)
-6.4
Power dissipation
PD (Note 2)
500
mW
t < 1s
1000
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
UFM
1: Gate 2: Source 3: Drain
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6mg (typ.)
Marking
3
Equivalent Circuit (top view)
3
JJM
1
2
1
2
Start of commercial production
2011-02
1
2014-03-01
SSM3J134TU
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min Typ. Max Unit
Drain-source breakdown voltage
V (BR) DSS ID = -1 mA, VGS = 0 V V (BR) DSX ID = -1 mA, VGS = 5 V
-20
⎯
⎯
V
.(Note 4) -15
⎯
⎯
V
Drain cut-off current
IDSS VDS = -20 V, VGS = 0 V
⎯
⎯
-1
μA
Gate leakage current
IGSS VGS = ±8 V, VDS = 0 V
⎯
⎯
±1
μA
Gate threshold voltage
Vth
VDS = -3 V, ID = -1 mA
-0.3
⎯
-1.0
V
Forward transfer admittance
⏐Yfs⏐ VDS = -3 V, ID = -1.0 A
(Note 3) 2.9
5.8
⎯
S
ID = -1.5 A, VGS = -4.5 V
(Note 3) ⎯ 78.5 93
Drain–source ON-resistance
RDS (ON) ID = -1.0 A, VGS = -2.5 V ID = -0.5 A, VGS = -1.8 V
(Note 3) ⎯ 97.5 123
mΩ
(Note 3) ⎯
120 168
ID = -0.25 A, VGS = -1.5 V (Note 3) ⎯
141 240
Input capacitance Output capacitance Reverse transfer capacitance
Ciss Coss Crss
VDS = -10 V, VGS = 0 V f = 1 MHz
⎯
290
⎯
⎯
44
⎯
pF
⎯
32
⎯
Switching time
Turn-on time Turn-off time
ton
VDD = -10 V, ID = -0.5 A
toff
VGS = 0 to -2.5 V, RG = 4.7 Ω
⎯
12
⎯
ns
⎯ 46.2 ⎯
Total gate charge Gate-source charge Gate-drain charge
Qg Qgs1 Qgd
VDD = -10 V, ID = -2.0 A, VGS = -4.5 V
⎯
4.7
⎯
⎯
0.4
⎯
nC
⎯
1.0
⎯
Drain-source forward voltage
VDSF ID = 3.2 A, VGS = 0 V
(Note 3) ⎯
0.9 1.2
V
Note 3: Pulse test
Note 4: If a forward bias is applied between gate and sour.