SMG3407

SMG3407 -4.1A, -30V,RDS(ON) 52m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A Description The SMG 3407 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. S 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 3 Top View B 1 A B C D G D G C J K Features * Lower Gate Charge * Small Package Outline * RoHS Compliant Gate Source H J K H Drain L S D All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -30 ±20 -4.1 -3.5 -20 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Free Datasheet http://www.datasheet4u.com/ Page 1 of 4 SMG3407 -4.1A, -30V,RDS(ON) 52m£[ Elektronische Bauelemente Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj...