Document
SMG3400
Elektronische Bauelemente 5.8A, 30V,RDS(ON) 28m£[ N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A
SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80
Description
* The SMG3400 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. * The SMG3400 is universally used for all commercial-industrial applications.
S
2
L
3 Top View
B
1
B C D
D G C J K
Drain Gate Source
G H J K L S
D
Features
* Lower Gate Charge * Small Package Outline * RoHS Compliant
H
All Dimension in mm
G
S
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings 30 ±12 5.8 4.9 30 1.38 0.01 -55 ~ +150 Value 90
Unit V V A A A W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max. Unit /W
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Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
Free Datasheet http://www.datasheet4u.com/
SMG3400
Elektronische Bauelemente 5.8A, 30V,RDS(ON) 28m£[ N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 )
unless otherwise specified)
Min. 30 0.7 Typ. 15 9.7 1.6 3.1 3.3 4.8 26.3 4.1 823 99 77 1.2 Max. 1.4 ±100 1 5 28 33 52 12 1030 3.6 pF ns nC m Unit V V S nA uA uA Test Conditions VGS=0, ID=250uA VDS=VGS, ID=250uA VDS=5V, ID=5A VGS= ±12V VDS=24V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=5.8A VGS=4.5V, ID=5.0A VGS=2.5V, ID=4.0A ID=5.8A VDS=15V VGS=4.5V VDS=15V VGS=10V RG=3 RL=2.7 VGS=0V VDS=15V f=1.0MHz f=1.0MHz
Symbol BVDSS VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance
RDS(ON)
-
Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Symbol VSD
2
-
Source-Drain Diode
Parameter Forward On Voltage
2
Min. -
Typ. 16 8.9 -
Max. 1.0 2.5
Unit V ns nC A
Test Conditions IS=1.0A, VGS=0V IS=5A, VGS=0V dI/dt=100A/ s VD=VG=0V, VS=1.0V
Reverse Recovery Time
Trr Qrr IS
Reverse Recovery Charge
Continuous Source Current (Body Diode)
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SMG3400
Elektronische Bauelemente 5.8A, 30V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
10 1 0.1 0.01 0.001 0.0001 0.00001 0.000001
Fig 4. Normalized On-Resistance v.s. Junction Temperature
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Fig 5. Forward Characteristics of Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 4
SMG3400
Elektronische Bauelemente 5.8A, 30V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Transfer Characteristics
Fig 10. Single Pulse Power
Fig 11. Normalized Thermal Transient Impedance, Junction to Ambient
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4
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