isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BUL38D
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCE...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
BUL38D
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 450V(Min.) ·Collector Saturation Voltage
: VCE(sat) = 0.5V(Max) @ IC= 1.0A ·Very High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in lighting applications and low cost switch-
mode power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
800
V
VCEO Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-peak tp<5ms
10
A
IB
Base Current-Continuous
2
A
IBM
Base Current-peak tp<5ms
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
4
A
80
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-A
Thermal Resistance,Junction to Case
1.56 ℃/W
Thermal Resistance,Junction to Ambient 62.5 ℃/W
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isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
BUL38D
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; Ib=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VCE(sat)-2 Collector-Emitter Saturation Vo...