SH8M5

4V Drive Nch+Pch MOSFET SH8M5 Structure Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type SH8M5 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain (8) Tr1 (Nch) Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD. ∗1 ∗1 Symbol VDSS VGSS ID IDP∗1 IS ISP∗1 PD∗2 Tch Tstg Continuous Pulsed Continuous Pulsed Limits Nchannel Pchannel 30 −30 ±20 ±20 ±6.0 ±7.0 ±24 ±28 1.6 −1.6 24 −28 2 150 −55 to +150 Unit V V A A A A W °C °C (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Thermal resistance Parameter Channel to ambient ∗MOUNTED ON A CERAMIC BOARD. Symbol Rth (ch-a)∗ Limits 62.5 Unit °C / W www.rohm.com c...