Document
Ordering number:ENN2262B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1552/2SC4027
High-Voltage Switching Applications
Applications
· Converters, inverters, color TV audio output.
Features
· Adoption of FBET, MBIT processes. · High voltage and large current capacity. · Fast switching time. · Small and slim package permitting 2SA1522/
2SC4027-applied sets to be made more compact.
Package Dimensions
unit:mm
2045B
[2SA1552/2SC4027]
6.5
1.5
5.0
2.3
4
0.5
7.0
5.5
unit:mm 2044B
0.85 0.7
0.6 12 3
2.3
2.3
0.8 1.6 7.5
1.2
0.5
1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP
[2SA1552/2SC4027]
6.5
2.3
1.5
5.0
0.5
4
7.0
5.5
1.2
0.85
12
3
0.8
0.6
2.3
2.3
2.5
0.5
1.2 0 to 0.2
1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53002RM (KT)/72098HA (KT)/8109MO/5137TA, TS No.2262-1/5
2SA1552/2SC4027
( ) : 2SA1552
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance
Symbol
Conditions
ICBO IEBO hFE1 hFE2
fT
Cob
VCB=(–)120V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)100mA VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)50mA
VCB=–(–)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltatage Collector-to-Base Breakdown Volage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time
Storage Time
VCE(sat) IC=(–)500mA, IB=(–)50mA
VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
ton
IC=(–)500mA, IB=(–)50mA IC=(–)10A, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified Test Circuit.
tstg
See specified Test Circuit.
Fall Time
tf
See specified Test Circuit.
* : The 2SA1552/2SC4027 are classified by 100mA hFE as follows :
Rank
R
S
T
hFE
100 to 200 140 t.