Power Transistors
2SA1535, 2SA1535A
Silicon PNP epitaxial planar type
For low-frequency driver and high power amplifica...
Power
Transistors
2SA1535, 2SA1535A
Silicon
PNP epitaxial planar type
For low-frequency driver and high power amplification Complementary to 2SC3944 and 2SC3944A
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Unit: mm
4.2±0.2
s Features
q q q
4.0
Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics High transition frequency fT Makes up a complementary pair with 2SC3944 and 2SC3944A, which is optimum for the driver-stage of a 60 to 100W output amplifier. (TC=25˚C)
Ratings –150 –180 –150 –180 –5 –1.5 –1 15 2.0 150 –55 to +150 Unit V
7.5±0.2
16.7±0.3
φ3.1±0.1
1.4±0.1
1.3±0.2
14.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SA1535 2SA1535A 2SA1535 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO
Solder Dip
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25 5.08±0.5 1 2 3
emitter voltage 2SA1535A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage 2SA1535 2SA1535 2SA1535A
(TC=25˚C)
Symbol ICBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –150V, IE = 0 IC = –1mA, IB = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –5V, IC = –500mA IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA VCE = –10V, IC = –50mA, f = 10MHz VCB = –10V, ...