Document
Freescale N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology
AO48 26 / MC48 26
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 35 @ VGS = 10V 60 45 @ VGS = 4.5V
ID (A) ±6.4 ±5.6
1 2 3 4
8 7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units 60 VDS Drain-Source Voltage V VGS ±20 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
b a a
o
TA=25 C TA=70 C
o
o
ID IDM IS
±6.4 ±5.2 ±40 2 2.1 1.3 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
TA=25 C TA=70 C
o
o
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambienta t <= 10 sec Steady State
Symbol
RθJA
Maximum 62.5
110
Units
o o
C/W C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
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1
Free Datasheet http://www.datasheet4u.com/
Freescale
AO48 26 / MC48 26
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter Static
Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
A A
o
Symbol
VGS(th) IGSS IDSS ID(on) rDS(on) g fs VSD Qg Qgs Qgd td(on) tr td(off) tf
Test Conditions
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 20 V
Limits Unit Min Typ Max
1
±100
nA uA A
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, T J = 55oC
1 10 20 35 45 11 1.2 12.5 2.4 2.6 11 8 19 6
Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage
A
VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 6.4 A VGS = 4.5 V, ID = 5.6 A VDS = 15 V, ID = 6.4 A IS = 2.0 A, VGS = 0 V
mΩ S V
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 30 V, VGS = 4.5 V, ID = 6.4 A nC
Switching
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time VDD = 30 V, RL = 30 Ω , ID = 1 A, VGEN = 10 V nS
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
FREESCALE reserves the right to make changes without fu rther notice to any products herein. FREESCALE makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in freescale data sheets and/or specif.