Dual N-Channel MOSFET
Freescale Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proc...
Description
Freescale Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology
AO48 00/ MC48 00
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 58 @ VGS = 4.5V 30 82 @ VGS = 2.5V
1 2 3 4
ID (A) 5.0 4.2
8 7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage 30 VDS V Gate-Source Voltage VGS ± 12 Continuous Drain Current Pulsed Drain Current
b a a
o
TA=25 C TA=70 C
o
o
ID IDM IS
5.0 4.1 ± 30 1.7 2.1 1.3 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
TA=25 C TA=70 C
o
o
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambienta t <= 10 sec Steady State
Symbol
RθJA
Maximum 62.5 80
Units
o o
C/W C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
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1
Free Datasheet http://www.datasheet4u.com/
Freescale
AO48 00/ MC48 00
SPECIFICATIONS (T A =...
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