LE28DW3212AT-80B

32 Megabit FlashBank Memory LE28DW3212AT-80B FEATURES: 1 Sp ec ifi ca tio ns Single 3.0-Volt Read and Write Operations Separate Memory Banks by Address Space – Bank1: 16Mbit (1024K x 16 / 2048K x 8) Flash – Bank2: 16Mbit (1024K x 16 / 2048K x 8) Flash – Simultaneous Read and Write Capability Read Access Time – 80 ns Latched Address and Data End of Write Detection – Toggle Bit / Data # Polling / RY/BY# Write Protection by WP# pin Flash Bank: Two Small Erase Element Sizes – 2K Words per Sector or 32K Words per Block – Erase either element before Word Program CMOS I/O Compatibility Packages Available – 48-Pin TSOP (12mm x 20mm) Continuous Hardware and Software Data Protection (SDP) Superior Reliability – Endurance: 10,000 Cycles 100,000 Cycles (Sector Erase) – Data Retention: 10 years Low Power Consumption – – – – Active Current, Read: Active Current, Read & Write: Standby Current: Auto Low Power Mode Current: 10 mA (typical) 30 mA (typical) 5µA (typical) 5µA (typical) Fast Write Operation – Chip Erase + Program: – Block Erase + Program: – Sector Erase + Program: 30 sec (typical) 500 ms (typical) 45 ms (typical) Product Description The LE28DW3212AT consists of two memory banks, 2 each contains of 1024K x 16 bits or 2048K x 8 sector mode flash EEPROM manufactured with SANYO's proprietary, high performance FlashTechnology. The LE28DW3212AT writes with a 3.0-volt-only power supply. The LE28DW3212AT is divided into two separate memory banks. Each F...