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SW830A
N-channel MOSFET
Description
SAMWIN SW830A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typ 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 500V ID : 5.5A RDS(ON) : 1.5ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SA...
SAMWIN
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