TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/262 Devices 2N1722 2N1724 Qualified Level J...
TECHNICAL DATA
NPN SILICON HIGH POWER
TRANSISTOR
Qualified per MIL-PRF-19500/262 Devices 2N1722 2N1724 Qualified Level JAN JANTX
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC PT
Value
80 175 10 5.0 3.0 50 175 -65 to +200
Units
Vdc Vdc Vdc Adc W W
0
@ TA = +250C(1) @ TC = +1000C (2) TOP, Temperature Range: Operating Storage Junction Tstg 1) Derate linearly 20 mW/0C for TA between +250C and +1750C 2) Derate linearly 666 mW/0C for TC between +1000C and +1750C
TO-61* 2N1724
C
TO-53* 2N1722
*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol V(BR)CEO V(BR)EBO ICES ICBO IEBO Min. 80 10 300 5.0 400 Max. Unit Vdc Vdc µAdc mAdc µAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 200 mAdc Emitter-Base Breakdown Voltage IE = 10 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc Collector-Base Cutoff Current VCB = 175 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc
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2N1722, 2N1724 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio IC = 2.0 Adc, VCE = 15 Vdc IC = 5.0 Adc, VCE = 15 Vdc IC = 100 mAdc, VCE = 15 Vdc Collector-Emitter Saturation Voltage IC = 2.0 Adc, IB = 200 mAdc Base-Emitte...