K3531-01

2SK3531-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol Ratings V DS 900 VDSX *5 900 ID ±6 ID(puls] ±24 VGS ±30 IAR *2 6 EAS *1 244 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25°C 2.02 Tc=25°C 195 Tch +150 -55 to +150 Tstg Unit V V A A V A mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=12.4mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *3 IF< = BVDSS, Tch < = 150°C *4 VDS< = -ID, -di/dt=50A/µs, Vcc < = 900V °C °C <150°C *2 Tch = *5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanc...