MCN5802B

Freescale AON5802B/ MCN5802B N-Channel 20-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 20 @ VGS = 4.5V 24 @ VGS = 2.5V 39 @ VGS = 1.8V VDS (V) 20 ID(A) 7.1 6.5 5.1 DFN3x3-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±8 TA=25°C 7.1 ID Continuous Drain Current a TA=70°C 5.8 IDM Pulsed Drain Current b 40 a I 2.1 Continuous Source Current (Diode Conduction) S T =25°C 1.5 A PD Power Dissipation a TA=70°C 1 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 83 RθJA 120 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 www.freescale.net.cn Free Datasheet http://www.datasheet4u.com/ Freescale Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capaci...