15N60HS

SGB15N60HS ^ High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation Short circuit withstand time – 10 µs Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 15A Eoff 200µJ Tj 150°C Marking G15N60HS Package PG-TO-263-3-2 G C E PG-TO-263-3-2 (D²-PAK) (TO-263AB) Type SGB15N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Symbol VCE IC Value 600 27 15 Unit V A Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature (reflow soldering, MSL1) 2) ICpul s VGE tSC Ptot Tj ,Tstg Tj(tl) - 60 60 ±20 ±30 10 138 -55...+150 175 245 V µs W °C VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev 2.3 Oct 06 Power Semiconductors Free Datasheet http://www.datasheet4u.com/ S...