Bipolar Transistors Silicon PNP Epitaxial Type
2SA1241
2SA1241
1. Applications
• Power Amplifiers • Power Switching
2....
Bipolar
Transistors Silicon
PNP Epitaxial Type
2SA1241
2SA1241
1. Applications
Power Amplifiers Power Switching
2. Features
(1) Low collector-emitter saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1.0 A, IB = -50 mA) (2) High-speed switching: tstg = 1.0 µs (typ.) (3) Complementary to 2SC3076
3. Packaging and Internal Circuit
1. Base 2. Collector (Heatsink) 3. Emitter
New PW-Mold
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
Emitter-base voltage
VEBO
-5
Collector current (DC)
(Note 1)
IC
-2
A
Collector current (pulsed)
(Note 1)
ICP
-3
Base current Collector power dissipation Collector power dissipation Junction temperature
(Ta = 25 �) (Tc = 25 �)
IB
-1
PC
1
W
PC
10
Tj
150
�
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc)...