2SA1201

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Power Amplifier Applications 2SA1201 Unit: mm High voltage: VCEO = −120 V High transition frequency: fT = 120 MHz (typ.) Small flat package PC = 1 to 2 W (mounted on a ceramic substrate) Complementary to 2SC2881 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO −120 V VCEO −120 V VEBO −5 V IC −800 mA IB −160 mA PC 500 PC mW 1000 (Note 1) Tj 150 °C Tstg −55 to 150 °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1980-07 1 2013-11-...