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2SA1200

Part Number	2SA1200
Manufacturer	Toshiba Semiconductor
Description	SILICON PNP TRIPLE DIFFUSED TRANSISTOR
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 2SA1200 High Voltage Switching Applications ...
Datasheet	2SA1200 PDF File

Overview

TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 2SA1200 High Voltage Switching Applications · High voltage: VCEO = −150 V · High transition frequency: fT = 120 MHz (typ.
) · Small flat package · PC = 1 to 2 W (mounted on ceramic substrate) · Complementary to 2SC2880 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation VCBO VCEO VEBO IC IB PC PC (Note 1) −150 −150 −5 −50 −10 500 800 V V V mA mA mW Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C Note 1: 2SA1200 mounted on ceramic substr...

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